schottky barrier diode RB557W ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)ultra small mold type. (emd3) 2)low vf 3)high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v r v io ma i fsm ma tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit v f 1 - - 0.35 v i f =10ma v f 2 - - 0.49 v i f =100ma i r --10 a v r =10v reverse current conditions (*1) rating of per diode parameter forward voltage junction temperature 125 storage temperature ? 40 to ? 125 average rectified forward current (*1) 100 forward current surge peak (60hz ?1cyc) (*1) 500 parameter limits reverse voltage (dc) 30 emd3 0.7 0.5 0.5 0.7 0.7 0.6 0.6 1.3 rohm : emd3 jeita : sc-75a jedec : sot-416 dot (y ear week factor y (3) 1.60.2 1.60.2 1.00.1 0.80.1 0.5 0.5 (2) (1) 0.150.05 0.70.1 0.550.1 0.1min 00.1 0.20.1 -0.05 0.30.1 0.05 4.00.1 2.00.05 1.550.1 0 3.50.05 1.750.1 8.00.2 0.50.1 1.80.2 0.30.1 1.80.1 5.50.2 0.90.2 00.1 1.5 ? 0.1 ? 0 1/3 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RB557W forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics 0.001 0.01 0.1 1 10 100 1000 0 100 200 300 400 500 600 0.01 0.1 1 10 100 1000 10000 0 102030 ta=-25 ta=125 ta=25 ta=75 1 10 100 0 5 10 15 20 f=1mh 0 5 10 15 20 25 30 ta=25 vr=10v n=30pcs ave:2.017ua 10 11 12 13 14 15 16 17 18 19 20 ave:17.34pf ta=25 f=1mhz vr=0v n=10pcs 0 5 10 0.1 1 10 100 t ifsm 0 5 10 15 20 ave:3.90a 8.3ms ifsm 1cyc 0 5 10 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 0.02 0.04 0.06 0.08 0.1 00.10.2 per diode 0 0.02 0.04 0.06 0.08 0.1 0102030 per diode 1 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time ta=-25 ta=125 ta=75 ta=25 250 260 270 280 290 300 ta=25 if=10ma n=30pcs ave:270.2mv dc d=1/2 sin(?180) sin(?180) dc d=1/2 mounted on epoxy board 2/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB557W ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.1 0.2 0.3 0 25 50 75 100 125 per diode 0 0.1 0.2 0.3 0 25 50 75 100 125 per diode sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=15v 0a 0v t tj=125 d=t/t t vr io vr=15v 0a 0v sin(?180) dc d=1/2 3/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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